MS55O

M.2 NVMe PCIe Gen4x4



Optimal SSD with

Exceptional Price-Performance


Returning to the performance of doing more, faster, FASTRO NVMe SSDs are optimized for the growing number of non-face-to-face computing environments.


KEY FEATURES


SLC Cashing
High Performance
3D TLC NAND Flash and DDR4 DRAM
High Capacity 
up to 4TB
High Endurance
Reliable 
Thermal Control

Interface Specifications

PCIe Gen5x4

Capacity 

1 T B up to 4 TB 

 



Form-Factor Specifications

NVMe M.2 2280(M key)




Memory

3D TLC NAND Flash Memory & DDR4 DRAM




High Endurance(TBW)

700 TB up to 3,200 TB




 Performance

 Sequential Read of 14,000MB/s 

Sequential Write of 12,000MB/s


Product Features

The following is a list of advanced or unique features supported by MS550


  • NVMe PCIe Gen5x4
  • Sequential Read of 14,000MB/s 
  • Sequential Write of 12,000MB/s
  • Capacity up to 4TB
  • Form Factor: M.2 2280(M key)
  • Endurance(TBW): 700TB up to 3,200TB
  • 3D TLC NAND Flash & DDR4 DRAM
  • 5 Years Warranty

5-Year Warranty

   Backed by 5-Year Limited Warranty We promise a '5-year limited warranty and free technical support' for users to use with peace of mind.

Specifications

Thorough quality control through in-house design and production

  

   Thorough quality control is possible because all SSD production processes such as circuit, PCB design, and memory tests are carried out as an in-house solution through a one-stop process. We minimize the defective rate through 100% RDT(Reliability Demonstration Test) testing for memory bad blocks and thorough quality testing.

MS550


M.2 NVMe PCIe Gen5x4


Optimal SSD with Exceptional Price-Performance


Returning to the performance of doing more, faster, FASTRO NVMe SSDs 
are optimized for the growing number of non-face-to-face computing environments.





KEY FEATURES

SLC
Cashing
High
Performance
3D TLC NAND
& DDR4 DRAM
High Capacity 
up to 4TB


High 
Endurance


Reliable 
Thermal Control



Interface Specifications

PCIe Gen5x4




Capacity                                                  Form-Factor Specifications


1 TB up to 4 TB                                                                                             NVMe M.2 2280(M key)






Performance


Seq Read (up to)  14,000 MB/s |Seq Write (up to)  12,000 MB/s






Memory                                                   High Endurance(TBW)


3D TLC NAND Flash Memory & DDR4 DRAM                                             700 TB up to 3,200 TB







Product Features

The following is a list of advanced or unique features supported by MS550

  • NVMe PCIe Gen5x4
  • Sequential Read of 14,000MB/s
  • Sequential Write of 12,000MB/s
  • Capacity up to 4TB
  • Form Factor: M.2 2280(M key)
  • Endurance(TBW): 700TB up to 3,000TB
  • 3D TLC NAND Flash & DDR4 DRAM
  • 5 Years Warranty




mobile background

High Capacity

Up to 4TB without shortage of capacity

You can instantly jump back into 

large intensive work files or graphics-heavy games.

5-Year Warranty


Backed by 5-Year Limited Warranty We promise a '5-year limited warranty and free technical support' for users to use with peace of mind.


                                               MS550 Specifications


  

Interface
Physical
PCle 5.0x4, NVMe 2.0

Hardware

Form Factor
M.2 2280 Double Side
Capacity
1TB|2TB|4TB  
Memory
NAND Flash
3D TLC
Cache Memory
DDR4

Performance

Sequential Read
14,000 MB/s
Sequential Write
12,000 MB/s
IOPS
4K Random Read
1,400K IOPS
4K Random Write
1,400K IOPS
Reliability
Operation Temperature
Standard Grade, 0°C ~ 70°C 
Storage Temperature
Standard Grade, -40°C ~ +85°C

Feature
Endurance(TBW)
1TB
700TB
2TB
1,400TB
4TB
3,000TB
Warranty
5 Years Limited Warranty 
Power(Up to) Ref Capacity : 4TB, Active
11.2W(Max)

- All product specifications reflect internal results and may vary depending on the user's system configuration.

- All product images are examples and may not precisely match the actual product.

- Mdevice reserves the right to change product images and documentation at any time without prior notice.

Thorough quality control through in-house design and production

Thorough quality control is possible because all SSD production processes such as circuit, PCB design, and memory tests are carried out as an in-house solution through a one-stop process. We minimize the defective rate through 100% RDT(Reliability Demonstration Test) testing for memory bad blocks and thorough quality testing.